COMPOUND SEMICONDUCTOR
Mitsubishi Electric launches DFB & APDs for 10G-EPON networks
Edited by : AL CIRCLE
2 min read
The DFB-LD, which incorporates an aluminium indium gallium arsenide active layer and the APD featuring an aluminium indium arsenide (AlInAs) multiplication layer will contribute to simpler networks and faster broadband service.
Mitsubishi Electric Corporation is launching a distributed feedback laser diode (DFB-LD) (ML7xx42) and an avalanche photodiode (APD) (PD8xx24) suitable for the optical network units (ONU) of symmetric 10 gigabit Ethernet passive optical networks (10G-EPON).
The ML7xx42 and PD8xx24 both will launch commercially on November 30, 2011.
While current fibre to the home (FTTH) services are mainly based on 1 Gbps gigabit Ethernet passive optical networks (GE-PON), symmetric 10G-EPON offering 10 Gbps upstream and downstream performance are expected to be commercialised soon. However, 10G-EPON are simple networks that use optical couplers and require high-power DFB-LD and high-sensitivity APD due to optical loss in the couplers.
Mitsubishi Electric's new high-power, low-current DFB-LD and high-sensitivity APD are both suitable for symmetric 10G-EPON ONUs and thereby will contribute to network simplification and faster broadband service.
The high-power, low operating current DFB-LD, which has an AlGaInAs active layer, offers 10 Gbps high-speed performance due to improved modulation bandwidth. It can operate at 10 mW output power despite low operating current in high-temperature conditions.
The TO-CAN APD featuring an AlInAs multiplication layer has a typical top-level sensitivity of 31.5dBm, low-noise and a new high-frequency circuit board with suppressed noise output.
Mitsubishi Electric Corporation is launching a distributed feedback laser diode (DFB-LD) (ML7xx42) and an avalanche photodiode (APD) (PD8xx24) suitable for the optical network units (ONU) of symmetric 10 gigabit Ethernet passive optical networks (10G-EPON).
The ML7xx42 and PD8xx24 both will launch commercially on November 30, 2011.
While current fibre to the home (FTTH) services are mainly based on 1 Gbps gigabit Ethernet passive optical networks (GE-PON), symmetric 10G-EPON offering 10 Gbps upstream and downstream performance are expected to be commercialised soon. However, 10G-EPON are simple networks that use optical couplers and require high-power DFB-LD and high-sensitivity APD due to optical loss in the couplers.
Mitsubishi Electric's new high-power, low-current DFB-LD and high-sensitivity APD are both suitable for symmetric 10G-EPON ONUs and thereby will contribute to network simplification and faster broadband service.
The high-power, low operating current DFB-LD, which has an AlGaInAs active layer, offers 10 Gbps high-speed performance due to improved modulation bandwidth. It can operate at 10 mW output power despite low operating current in high-temperature conditions.
The TO-CAN APD featuring an AlInAs multiplication layer has a typical top-level sensitivity of 31.5dBm, low-noise and a new high-frequency circuit board with suppressed noise output.
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