HexaTech accelerates power electronics roadmap with 3-inch aluminium nitride substrate

HexaTech, Inc. confirmed the immediate production release of its new 3-inch (76.2 mm) diameter single-crystal aluminium nitride (AlN) substrate, marking a pivotal scale-up in advanced semiconductor materials. The expansion from its established 2-inch platform signals a strategic transition milestone toward 100 mm diameter material, a size critical for high-volume manufacturing of high-voltage and high-frequency electronic devices used in power grids, EVs, RF systems, and defence electronics.

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As the world’s leading commercial supplier of single-crystal physical vapour transport (PVT)-grown AlN substrates, HexaTech is not merely increasing the size of the substrate but improving manufacturability and cost efficiency. Larger diameters typically reduce cost per device while improving throughput.

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“With this 3-inch launch, HexaTech continues to build on its history of delivering AlN material with industry-leading structural and surface quality, retaining the same macroscopic defect-free performance we have been producing for many years with our existing 2-inch platform,” remarked HexaTech Manager of Research and Development Dr. Rafael Dalmau.

Gregory Mills, HexaTech VP of Business Development, noted, “HexaTech continues to drive increased value by delivering superior quality alongside reduced price per unit area to our customers. This accelerating trend will enable our customers to quickly transition from device research into production.”

“With our strategic focus on substrate diameter expansion, this launch is once again demonstrating HexaTech’s commitment to deliver our customers the market-leading AlN substrate solution,” commented HexaTech CEO John Goehrke.

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