Crystal IS, a subsidiary of Asahi Kasei has achieved a significant milestone in advanced material technology with the serial production of 100 mm diameter single-crystal aluminium nitride (AlN) substrates. These substrates boast a remarkable 99 per cent usable area, aligning with the current stringent requirements for UVC LEDs.
Aluminium nitride, known for its ultra-wide bandgap and high thermal conductivity, is pivotal in enhancing the reliability and performance of UVC LEDs. This breakthrough promises to advance UVC LED technology and hold potential benefits for next-generation RF and power devices, marking a notable step forward in the field of electronic materials.
Eoin Connolly, the President and CEO of Crystal IS stated, “The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in Crystal Growth.”
“The inherent thermal benefits of aluminium nitride can enable higher-performing RF and power devices in mission-critical and telecom applications - we are excited to work with our partners to develop this material further to meet their needs.”
Following the company's landmark achievement in August 2023, recording the first-ever 100 mm diameter AlN substrate, Crystal IS won the Grand Prize in the Electronic Materials for Semiconductors category at the 2024 Semiconductor of the Year Awards.
Crystal IS, headquartered in Green Island, New York, produces bulk single crystal AlN substrates and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023.
Reaching the 100 mm diameter milestone accelerates the development of new applications on AlN substrates, enabling integration into existing fabrication lines for RF and power devices that use alternative materials.
The company announced plans to offer 100 mm diameter substrates exclusively manufactured at its US facility to key partners this year as they continue to expand beyond UVC LEDs.
Responses
