24 AUGUST 2011semiconductoronline
NMIC Introduces Industry's First Aluminum Diamond Heat Spreader Material For GaN Devices
Edited by : AL CIRCLE
1 min read
Nano Materials International Corp. (NMIC) recently introduced the first commercial device-level solution for dissipating the heat generated by high-density semiconductor devices such as gallium nitride (GaN) RF power transistors. When used as a heat spreader integrated with a device, NMIC's new aluminum diamond metal matrix composites (MMCs), have demonstrated their ability to reduce device junction temperatures by up to 25%, allowing the devices to generate their full power output at their highest efficiency and potentially extend their operating life. NMIC's aluminum diamond MMC material is the first aluminum diamond MMC material to be economically viable in high volume at a cost that adds minimally to each GaN device.
Previous article
Southwest Aluminum Business Performance Increasing
Next articleGiga Solar sees 30% of 1H11 sales from silver aluminum paste
Grow with
AL Circle
